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PROFET(R) ITS612N1
Smart Two Channel Highside Power Switch For Industrial Applications
* Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in OFF-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection
Features
Product Summary Overvoltage protection Vbb(AZ) Vbb(on) Operating voltage Operating temperature Ta
43 5.0 ... 34 -30 ... +85
both
V V C
channels: each parallel On-state resistance RON 200 100 m Load current (ISO) 2.3 4.4 A IL(ISO) 4 4 A Current limitation IL(SCr) PG-TO220AB/7
Application
7
7
1 * C compatible power switch with diagnostic Standard feedback for 12 V and 24 V DC grounded loads in industrial applications * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays, fuses and discrete circuits
Straight leads
1
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V bb
Voltage source V
Logic
Overvoltage protection
Current limit 1
Gate 1 protection
4
Voltage sensor
Level shifter Rectifier 1 Charge pump 1 Charge pump 2
Limit for unclamped ind. loads 1 Open load Short to Vbb detection 1 Current limit 2 Gate 2 protection
OUT1
3 6 5
IN1 IN2
Temperature sensor 1
1
ESD
ST
Logic
Level shifter Rectifier 2
Limit for unclamped ind. loads 2 Open load Short to Vbb detection 2
OUT2
Temperature sensor 2
7
Load
PROFET 2
GND Signal GND
Load GND
1)
With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load.
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PROFET(R) ITS612N1
Pin 1 2 3 4 5 6 7 Symbol OUT1 (Load, L) GND IN1 Vbb ST IN2 OUT2 (Load, L) Function Output 1, protected high-side power output of channel 1 Logic ground Input 1, activates channel 1 in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback: open drain, low on failure Input 2, activates channel 2 in case of logical high signal Output 2, protected high-side power output of channel 2
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150C Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 , RL= 5.3 , td= 200 ms, IN= low or high Load current (Short circuit current, see page 5) Junction temperature Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const. one channel, IL = 2.3 A, ZL = 89 mH, 0 : both channels parallel, IL = 4.4 A, ZL = 47 mH, 0 :
see diagrams on page 9
Symbol Vbb Vbb VLoad dump IL Tj Ta Tstg Ptot EAS
4)
Values 43 34 60 self-limited +150 -30 ... +85 -40 ...+105 36 290 580 1.0 2.0 -10 ... +16 2.0 5.0
Unit V V V A C
W mJ
Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagrams page 7
IN: VESD all other pins: VIN IIN IST
kV V mA
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
2)
3) 4)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
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Parameter and Conditions, each channel
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Thermal Characteristics
Parameter and Conditions Thermal resistance Symbol chip - case, both channels: RthJC each channel: junction - ambient (free air): RthJA min ---Values typ max -3.5 -7.0 -75 Unit K/W
Electrical Characteristics
Parameter and Conditions, each channel
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1 or 7) IL = 1.8 A Tj=25 C: RON each channel Tj=150 C: Nominal load current, ISO Norm (pin 4 to 1 or 7) VON = 0.5 V, TC = 85 C each channel: IL(ISO) both channels parallel: Output current (pin 1 or 7) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 8 Turn-on time IN to 90% VOUT: to 10% VOUT: Turn-off time IN RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C IL(GNDhigh) ton toff dV /dton -dV/dtoff -1.8 3.5 -80 80 0.1 0.1 160 320 2.3 4.4 -200 200 --200 400 --10 400 400 1 1 m
A mA s
V/s V/s
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Parameter and Conditions, each channel
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Operating Parameters Operating voltage5) Undervoltage shutdown Undervoltage restart
Tj =-40...+150C: Tj =-40...+150C: Tj =-40...+25C: Tj =+150C: Undervoltage restart of charge pump see diagram page 12 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: 6) Overvoltage protection Tj =-40...+150C: Ibb=40 mA Standby current (pin 4), VIN=0 Tj=-40...+150C: 7) Operating current (Pin 2) , VIN=5 V both channels on, Tj =-40...+150C, Operating current (Pin 2)7) one channel on, Tj =-40...+150C:,
Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) Ibb(off) IGND IGND
5.0 3.5 ---34 33 -42
---5.6 0.2 --0.5 47
34 5.0 5.0 7.0 7.0 -43 ----
V V V V V V V V V A
----
90 0.6 0.4
150 1.2 0.7
mA mA
5) 6) 7)
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 8. Add IST, if IST > 0, add IIN, if VIN>5.5 V
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Parameter and Conditions, each channel
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Protection Functions8) Initial peak short circuit current limit (pin 4 to 1 or 7) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit shutdown current limit Tj = Tjt (see timing diagrams, page 11) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 4 to 2) 9) Reverse battery voltage drop (Vout > Vbb) IL = -1.9 A, each channel Tj=150 C: Diagnostic Characteristics Open load detection current
(included in standby current Ibb(off))
IL(SCp) 5.5 4.5 2.5 IL(SCr) -VON(CL) Tjt 41 150 ---4 47 -10 -610 -53 --32 -A V C K V mV 9.5 7.5 4.5 13 11 7 A
Tjt
-Vbb -VON(rev)
IL(off) Tj=-40..150C: VOUT(OL)
-2
30 3
-4
A V
Open load detection voltage
8)
9)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8).
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PROFET(R) ITS612N1
Parameter and Conditions, each channel
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max 2.5 1.7 1.5 -1 20 -3.5 --0.5 -50 220 6 3.5 --50 90 --
Unit
Input and Status Feedback10) Input resistance Tj=-40..150C, see circuit page 7 Input turn-on threshold voltage Tj =-40..+150C: Input turn-off threshold voltage Tj =-40..+150C: Input threshold hysteresis Off state input current (pin 3 or 6), VIN = 0.4 V, Tj =-40..+150C On state input current (pin 3 or 6), VIN = 3.5 V, Tj =-40..+150C Delay time for status with open load
after Input neg. slope (see diagram page 12)
RI VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST OL3)
k V V V A A s
Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: VST(high) ST low voltage Tj =-40...+25C, IST = +1.6 mA: VST(low) Tj = +150C, IST = +1.6 mA:
5.4 ---
6.1 ---
-0.4 0.6
V
10)
If a ground resistor RGND is used, add the voltage drop across this resistor.
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PROFET(R) ITS612N1 Truth Table
IN1 Normal operation L L H H L L H L H X L L H L H X L X H L H X X X IN2 L H L H L H X L L H L H X L L H L H X X X L H X OUT1 L L H H Z Z H L H X H H H L H X L L L L L X X L OUT2 L H L H L H X Z Z H L H X H H H L L L X X L L L ST ITS612N1 H H H H L H H L H H L H H L H H H L L H L H L H
Open load
Channel 1
Channel 2
Short circuit to Vbb
Channel 1
Channel 2
Overtemperature
both channel
Channel 1 Channel 2 Undervoltage/ Overvoltage
L = "Low" Level H = "High" Level
X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 12)
Terms
V bb I IN1 I IN2 I ST V IN1 V 6 IN2 ST 4 3 IN1 Ibb VON2 OUT1 PROFET OUT2 GND 2 R GND IGND 7 V OUT1 1 VON1
Status output
+5V
V bb
I L1 I L2
R ST(ON)
ST
IN2 V 5 ST
V OUT2
GND
ESDZD
Input circuit (ESD protection)
R IN I
ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 380 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
ESD-ZD I GND
I
I
ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
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Inductive and overvoltage output clamp
+ V bb V Z
GND disconnect
V bb 3 IN1 IN2 ST 4 Ibb
Vbb OUT1 PROFET OUT2 GND 2 V GND
VON
6
OUT
1
7
5
GND
PROFET
VVV IN1 IN2 ST
VON clamped to 47 V typ.
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available.
Overvolt. and reverse batt. protection
+ V bb
GND disconnect with GND pull up
4 Vbb OUT1 IN2 ST PROFET OUT2 GND 2 7
IN1 IN2
RI Logic
V
Z2
3 V IN1 6 V IN2 5
IN1
1
R ST
ST V
Z1 GND
R GND
Signal GND
V bb
V ST
V GND
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 k typ, RGND= 150
Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available.
Open-load detection
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
Vbb disconnect with energized inductive load
4 3 high 6 5 IN2 ST PROFET OUT2 GND 2 7 IN1 Vbb OUT1 1
OFF
I L(OL)
V bb
Logic unit
Open load detection
V
OUT
Normal load current can be handled by the PROFET itself.
Signal GND
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Vbb disconnect with charged external inductive load
4 3 high 6 5 IN2 ST PROFET OUT2 GND 2 7 IN1 Vbb OUT1 1 D
Maximum allowable load inductance for a single switch off (both channels parallel)
L = f (IL ); Tj,start = 150C,TC = 150C const., Vbb = 12 V, RL = 0 L [mH] 1000
V bb
100
If other external inductive loads L are connected to the PROFET, additional elements like D are necessary.
Inductive Load switch-off energy dissipation
E bb E AS Vbb PROFET OUT EL ELoad
10
IN
=
ST GND ZL
{
L RL
1 2 3 4 5 6 7
IL [A]
ER
8
Energy stored in load inductance: EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : IL* L IL*RL ) EAS= 2*R *(Vbb + |VOUT(CL)|)* ln (1+ |V L OUT(CL)|
2
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Typ. transient thermal impedance chip case ZthJC = f(tp), one Channel active ZthJC [K/W] 10
1
0.1
D= 0.5 0.2 0.1 0.05 0.02 0.01 0
0.01 1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
tp [s]
Transient thermal impedance chip case ZthJC = f(tp), both Channel active ZthJC [K/W] 10
1
0.1
D= 0.5 0.2 0.1 0.05 0.02 0.01 0
0.01 1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
tp [s]
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Timing diagrams
Figure 1a: Vbb turn on:
Both channels are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels
Figure 2b: Switching an inductive load
IN1 IN IN2 V bb ST
V
OUT1
V
OUT
V
OUT2
I
L
ST open drain t
Figure 3a: Short circuit shut down by overtempertature, reset by cooling
t
Figure 2a: Switching a lamp:
IN
IN
other channel: normal operation
ST
IL I L(SCp)
V
OUT
IL(SCr)
I
L
ST t
Heating up may require several milliseconds, depending on external conditions
t
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Figure 4a: Overtemperature: Reset if Tj IN
IN
V ST
bb V
bb(under)
Vbb(u cp) Vbb(u rst)
V
OUT
V OUT
T
J
ST open drain t t
Figure 6b: Undervoltage restart of charge pump Figure 5a: Open load: detection in OFF-state, turn on/off to open load
Von
VON(CL)
IN1 IN2 channel 2: normal operation
off-state
on-state
VOUT1
V
bb(over)
IL1 channel 1: open load V t ST t
td(ST,OL3) depends on external circuitry because of high impedance *) IL = 30 A typ
V
bb(u rst)
V
bb(o rst)
V
bb(under)
bb(u cp)
d(ST OL3)
t d(ST OL3)
charge pump starts at Vbb(ucp) =5.6 V typ.
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off-state
V bb
PROFET(R) ITS612N1
Figure 7a: Overvoltage:
IN
Vbb
VON(CL)
Vbb(over)
V bb(o rst)
V
OUT
ST
t
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Package and Ordering Code
All dimensions in mm
Standard PG-TO220AB/7
ITS612N1
Ordering code SP000221233
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2006 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.
PG-TO220AB/7, Opt. E3230 Ordering code
ITS612N1 E3230 SP000221234
Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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